MRAM: New Features and Applications in Semiconductors

MRAM

We have already spoken on several occasions about the possible and most probable replacement for conventional RAM: the MRAM. But although until recently it was more of a concept, the truth is that the main semiconductor manufacturers are betting on it stronger and as a result of this, it is possible that it will finally reach the server and consumer market. How do developers see this technology and why is it catching on?

Memory (as a concept and not as a form) has suffered from a widespread problem for years: it advances at a slower rate than the miniaturization technology of the major semiconductor manufacturers. This means that it is always a link that everyone wants to jump in some way in their designs, but the truth is that when there is no other option, it becomes a problem, and this is where MRAM comes in.

MRAM will be the chosen alternative to eFlash or SRAM

Samsung-eMRAM-4

There are alternatives on the market to replace traditional RAM in all its aspects such as CMOS technology, towards another type of much more efficient product that adapts better and achieves more performance.

The eFlash or the SRAM in its simplest versions were an option, but MRAM is being the one who takes the cat to the water, since in the first each transistor is valid as a cell selection and data storage, it has a high voltage and only it can drop down to 28nm at the moment, far behind common industry.

SRAMs have cells that have between 6 and 8 transistors , they can be manufactured almost to the same level of miniaturization as CPU or GPU transistors, but it has a key problem: it occupies a large part of silicon and its capacity is not high for that reason. .

MRAM 4

And this is where MRAM comes in, as we are talking about a type of memory that can create a storage element called a magnetic tunnel junction or MTJ using multi-layer or BEOL cabling . This technology does not depend on the engraving technology of transistors

In case the concept is not clear: MRAM does not depend on whether we are recording the transistors with FinFET, FD SOI or GAA , we can do it with any of them, thus adjusting the development much more and launching much more accurate roadmaps.

In the efficiency section it is possibly where it stands out the most, since as it is a non-volatile access memory, the current consumption in standby mode is very low.

Three open fronts for this technology to take off definitively

MRAM

Samsung, IBM, Global Foundries and TSMC have presented their advances with this technology already in 2020, so we can get an idea of where the sector is going and how much time is left. There are three main aspects to be addressed. The first is the results shown at the IEDM 2020 by Samsung on the fact that MRAM can replace SRAM in a short period of time.

This is obviously very important due to the fact that half the world market works with SRAM, where the impact can change the paradigm of PCs and servers, among many other sectors.

MRAM 2

The second is that it will replace the eFlash as an integrated device, that is, integrated MRAM. The advance here is having achieved a higher degree of reliability at high temperatures, so it would already be optimal for cars, mobile phones or external storage cards among other sectors. It is said that the retention period of cells is 1 month at more than 125 ºC.

The latter is the most important, as it refers to the miniaturization of technology . In two years it has gone from 22 nm and 40 nm to a more than respectable 14 nm and 16 nm. They are still behind the most advanced processes, but the leap is very important at all nanometric levels.

In contrast, eMRAM has a service life of 100,000 cycles and a retention period of 10 years with temperature ranges from -40ºC to +125ºC, but it is only being developed by GF.

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What is sought with all these techniques is simple: integrate the logic of the transistors of the moment to a type of memory to reduce the total area of the chip and thereby launch a new boost to the size of the die and the general efficiency of any SoC , CPU, APU or GPU .

This is so advanced that Samsung is already producing this type of mass memory as eMRAM to replace Flash, so we are not facing a future technology that may not arrive, it is a reality that everyone is trying in their fabs to launch products Revolutionaries to the market.